Time Lag in CM-II Electrode System Attributed to Dielectric Surface Conditioning

Nawawi, Zainuddin and Ahmad, Husin and Kurnianto, Rudy and Hozumi, N and Nagao, M (2012) Time Lag in CM-II Electrode System Attributed to Dielectric Surface Conditioning. In: Proceeding 2012 IEEE International Conference on Condition Monitoring and Diagnosis. IEEE, Bali, Indonesia, pp. 425-428. ISBN 978-1-4673-1018-5

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    Abstract

    This paper deals with a digest on discharge time lag characteristics in a cylindrical void bounded polymethyl methacrylate (PMMA) and metal using the CIGRE method II (CMII) electrode system. The specimens were treated irradiations (0, 3, 6, 11, 16, 21 seconds) simulating material ageing in service which are very difficult to measure. It was found that, under room temperature, the longer plasma irradiation to the void surface will result in higher surface roughness indicated by the increase of surface protrusion sizes. The statistical discharge time lag (SDTL) has been studied using square pulse voltage with rising time 40 pulses. The SDTL value is inversely proportional to the surface conditioning. For a particular time period of plasma irradiation (3 s) , the specimens seem to recover its insulating property after given recovery time of 20 , 60, and 180 minutes compared to that of without recovery time. discharge time lag characteristics in a cylindrical void bounded polymethyl -using the CIGRE method II II) electrode system. The specimens were treated by plasma irradiations (0, 3, 6, 11, 16, 21 seconds) simulating material ageing in service which are very difficult to measure. It was found that, under room temperature, the longer plasma higher degree of face roughness indicated by the increase of surface protrusion sizes. The statistical discharge time lag (SDTL) has been studied using square pulse voltage with rising time 40 µs,through 64 pulses. The SDTL value is inversely proportional to the surface For a particular time period of plasma irradiation (3 s) , the specimens seem to recover its insulating property after , 60, and 180 minutes compared to that of without recovery time

    Item Type: Book Section
    Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
    Divisions: Faculty of Engineering > Department of Electrical Engineering
    Depositing User: Zainuddin Nawawi
    Date Deposited: 16 Sep 2013 13:43
    Last Modified: 16 Sep 2013 13:43
    URI: http://eprints.unsri.ac.id/id/eprint/2652

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